• DocumentCode
    1331355
  • Title

    47% Power Reduction and 91% Area Reduction in Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking

  • Author

    Saito, Mitsuko ; Yoshida, Yoichi ; Miura, Noriyuki ; Ishikuro, Hiroki ; Kuroda, Tadahiro

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
  • Volume
    57
  • Issue
    9
  • fYear
    2010
  • Firstpage
    2269
  • Lastpage
    2278
  • Abstract
    This paper presents a power reduction scheme and an area reduction scheme in inductive-coupling programmable bus for NAND flash memory stacking. A channel arrangement scheme using three coils enables random access for memory read and memory write. Transmit power is reduced by 47% compared to a previous design with shields. A coil layout style, herein noted as XY coil, allows for the coils to interleave with logic interconnections, resulting in area reduction of 91% relative to at the expense of only 17% transmit power increase. Relayed data transmission at 1.6 Gb/s and BER <; 10-12 is achieved.
  • Keywords
    NAND circuits; flash memories; integrated circuit interconnections; integrated circuit layout; programmable logic devices; NAND flash memory stacking; area reduction scheme; bit rate 1.6 Gbit/s; channel arrangement scheme; coil layout style; inductive-coupling programmable bus; logic interconnection; power reduction scheme; Bonding; Coils; Crosstalk; Receivers; Stacking; Transmitters; Wires; Inductive coupling; NAND flash; memory stacking; solid-state drive (SSD); three-dimensional; wireless interconnect;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2010.2071670
  • Filename
    5582165