Semiconductor microlenses fabricated by one-step wet etching

Author

Yu-Sik Kim ; Jaehoon Kim ; Joong-Seon Choe ; Young-Geun Rob ; Heonsu Jeon ; Woo, J.C.

Author_Institution

Dept. of Phys., Seoul Nat. Univ., South Korea

Volume

12

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

507

Lastpage

509

Abstract

We fabricated refractive semiconductor microlenses using a diffusion-limited chemical etching technique based an Br₂ solution. The simple one-step wet etching process produced high-quality microlenses of GaAs and InP, the two most popular compound semiconductor materials used in optoelectronics. A spherical GaAs microlens with a nominal lens diameter of 30 μm exhibited a radius of curvature and focal length of 91 and 36 μm, respectively. The surface roughness, examined by atomic force microscopy (AFM), was measured to be below /spl plusmn/10 /spl Aring/. This microlens fabrication method should be readily applicable due to the simplicity in processing and the high-quality results.

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; microlenses; optical fabrication; Br/sub 2/ solution; GaAs; InP; atomic force microscopy; diffusion-limited chemical etching; fabrication; focal length; one-step wet etching; radius of curvature; refractive semiconductor microlens; surface roughness; Atomic force microscopy; Atomic measurements; Chemicals; Force measurement; Gallium arsenide; Indium phosphide; Lenses; Microoptics; Semiconductor materials; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.841268

Filename

841268