Title :
The frequency behavior of the third-order intercept point in a waveguide photodiode
Author :
Jiang, H. ; Shin, D.S. ; Li, G.L. ; Vang, T.A. ; Scott, D.C. ; Yu, P.K.L.
Author_Institution :
Conextant Inc., Newport Beach, CA, USA
fDate :
5/1/2000 12:00:00 AM
Abstract :
In Hayes´s (1993) and Williams´s (1996) analyses, the photodiode nonlinearity is attributed to the space charge screening effect. In this paper, the third-order intermodulation distortions of a high frequency, large optical cavity p-i-n waveguide photodiode are characterized up to 18 GHz using a two-tone measurement. At high bias voltage, the third-order intercept point (IP3) of the waveguide photodiode is constant at low frequency and /spl sim/f/sup -3/ at high frequency. This closely agrees with our model, which is based upon variation of the photodiode impedance. The measured IP3 of the same device at low bias voltages indicates the contribution of space charge screening under low bias voltage or severe saturation.
Keywords :
intermodulation distortion; optical communication equipment; optical resonators; optical waveguides; p-i-n photodiodes; space charge; 18 GHz; frequency behavior; high bias voltage; high frequency large optical cavity p-i-n waveguide photodiode; low bias voltage; low bias voltages; measured IP3; photodiode impedance; photodiode nonlinearity; severe saturation; space charge screening; space charge screening effect; third-order intercept point; third-order intermodulation distortions; two-tone measurement; waveguide photodiode; Distortion measurement; Frequency measurement; Impedance; Intermodulation distortion; Low voltage; Optical distortion; Optical saturation; Optical waveguides; PIN photodiodes; Space charge;
Journal_Title :
Photonics Technology Letters, IEEE