• DocumentCode
    1331489
  • Title

    Impact ionisation and noise in SiGe multiquantum well structures

  • Author

    Herbert, D.C. ; Williams, C.J. ; Jaros, M.

  • Author_Institution
    DRA Electron. Div., Malvern
  • Volume
    32
  • Issue
    17
  • fYear
    1996
  • fDate
    8/15/1996 12:00:00 AM
  • Firstpage
    1616
  • Lastpage
    1618
  • Abstract
    A modified Keldysh form is proposed for ionisation scattering rates in strained SiGe layers. These rates are incorporated into a hot-carrier calculation to study avalanche noise in SiGe MQW structures. It is found that carrier heating is controlled by the thick Si layers and a pulsing of the ionisation in the SiGe layers acts to reduce the excess noise
  • Keywords
    Ge-Si alloys; avalanche breakdown; avalanche diodes; hot carriers; impact ionisation; semiconductor device noise; semiconductor materials; semiconductor quantum wells; Keldysh form; SiGe; avalanche noise; carrier heating; excess noise; hot-carrier calculation; impact ionisation; ionisation pulsing; ionisation scattering rates; multiquantum well structures; strained layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961035
  • Filename
    533328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1331489