DocumentCode
1331496
Title
Influence of UV illumination condition on NDR performance of porous silicon superlattice
Author
Wang, S.J. ; Lin, J.-C. ; Tsai, H.-Y.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
32
Issue
17
fYear
1996
fDate
8/15/1996 12:00:00 AM
Firstpage
1618
Lastpage
1619
Abstract
The authors report on the influence of the UV illumination condition on the negative differential resistance (NDR) performance of a porous silicon superlattice. It is found that the peak-to-valley current ratio (PVCR) can be improved by increasing the off-time of the illumination in each period
Keywords
characteristics measurement; negative resistance; photoconductivity; porous materials; semiconductor superlattices; NDR performance; Si; UV illumination condition; illumination off-time; negative differential resistance; peak-to-valley current ratio; porous semiconductors; semiconductor superlattices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961069
Filename
533329
Link To Document