DocumentCode :
1331516
Title :
Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition
Author :
Zhang, X. ; Walker, D. ; Saxler, A. ; Kung, P. ; Xu, J. ; Razeghi, M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Volume :
32
Issue :
17
fYear :
1996
fDate :
8/15/1996 12:00:00 AM
Firstpage :
1622
Lastpage :
1623
Abstract :
AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm-2 eV-1 from capacitance-voltage and conductance-voltage measurements
Keywords :
CVD coatings; aluminium compounds; inversion layers; semiconductor-insulator boundaries; AlN growth; AlN-Si; capacitance-voltage measurement; conductance-voltage measurement; interface trap level density; inversion layer; metal organic chemical vapour deposition; n-type Si(111) substrate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961061
Filename :
533332
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1331516
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