Title :
Correction to "Thermal rollover characteristics up to 150°C of buried-stripe type 980-nm laser diodes with a current injection window delineated by a SiN/sub∞/ layer"
Author :
Horie, Hideyoshi ; Yamamoto, Yoshitaka ; Arai, Nobuhiro ; Ohta, Hirotaka
Author_Institution :
Mitsubishi Chemical Corporation
fDate :
5/1/2000 12:00:00 AM
Abstract :
In the above-named letter [ibid., vol. 12, pp. 13??15, Jan. 2000] Fig. 4(b) was incorrect. The correct figure showing the degradation analysis result using EBIC is in the revised Fig. 4. In Fig. 4, the degraded area of the laser diode facet, which is difficult to see in the SEM image of Fig. 4(a), is more clearly observed in the revised Fig. 4(b), which corresponds to the EBIC image.
Keywords :
Chemical lasers; Chemical technology; Degradation; Diode lasers; Image analysis; Laboratories; Nonlinear optics; Optical wavelength conversion; Semiconductor optical amplifiers; Silicon compounds;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2000.841291