Title :
A Novel Enhanced Electric-Field Impact-Ionization MOS Transistor
Author :
Sarkar, Deblina ; Singh, Navab ; Banerjee, Kaustav
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
A novel enhanced electric-field impact-ionization MOS (E2I-MOS) is proposed, which achieves a subthreshold swing of as low as 6 mV/dec at room temperature while reducing the breakdown voltage by about 1.8 V. The E2I-MOS exhibits ≥ 10 × lower off-state leakage compared to previously reported I-MOS structures, thus reducing the power consumption and also making the device more scalable. A very high on current of the order of 1 mA/μm can be obtained. Additionally, the device reliability is expected to be improved by confining hot carrier generation away from the gate dielectric region.
Keywords :
MOSFET; hot carriers; impact ionisation; semiconductor device reliability; E2I-MOS; confining hot carrier generation; device reliability; enhanced electric field impact ionization MOS transistor; gate dielectric region; temperature 293 K to 298 K; Impact ionization; Logic gates; Photonic band gap; Reliability; Silicon; Silicon germanium; Band-to-band tunneling; I-MOS; breakdown voltage; impact ionization; subthreshold slope;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2066541
