Title :
Impact ionization in InAlAs/InGaAs/InAlAs HEMT´s
Author :
Webster, Richard T. ; Wu, Shangli ; Anwar, A.F.M.
Author_Institution :
Electromagn. Technol. Div., Air Force Res. Lab., Hanscom AFB, MA, USA
fDate :
5/1/2000 12:00:00 AM
Abstract :
The kink effect and excess gate current in InAlAs/InGaAs/InAlAs HEMT´s have been linked to impact ionization in the high field region of the channel. In this letter, a relationship is established between experimentally measured excess gate current and the tunneling of holes from the quantum well formed in the channel. The channel hole current is then obtained as the quotient of the excess gate current to the gate-voltage-dependent transmission probability. This channel hole current follows the exponential dependence of the ionization constant on the inverse electric field.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor quantum wells; tunnelling; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As; InAlAs/InGaAs/InAlAs HEMT; channel hole current; excess gate current; exponential dependence; gate-voltage-dependent transmission probability; high field region; hole tunneling; impact ionization; inverse electric field; ionization constant; kink effect; mm-wave HEMT; quantum well; Current measurement; Electrons; Force sensors; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; MESFETs; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
