Impact ionization in InAlAs/InGaAs/InAlAs HEMT´s

Author

Webster, Richard T. ; Wu, Shangli ; Anwar, A.F.M.

Author_Institution

Electromagn. Technol. Div., Air Force Res. Lab., Hanscom AFB, MA, USA

Volume

21

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

193

Lastpage

195

Abstract

The kink effect and excess gate current in InAlAs/InGaAs/InAlAs HEMT´s have been linked to impact ionization in the high field region of the channel. In this letter, a relationship is established between experimentally measured excess gate current and the tunneling of holes from the quantum well formed in the channel. The channel hole current is then obtained as the quotient of the excess gate current to the gate-voltage-dependent transmission probability. This channel hole current follows the exponential dependence of the ionization constant on the inverse electric field.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor quantum wells; tunnelling; In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As; InAlAs/InGaAs/InAlAs HEMT; channel hole current; excess gate current; exponential dependence; gate-voltage-dependent transmission probability; high field region; hole tunneling; impact ionization; inverse electric field; ionization constant; kink effect; mm-wave HEMT; quantum well; Current measurement; Electrons; Force sensors; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; MESFETs; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.841293

Filename

841293