A simple and reliable wafer-level electrical probing technique for III-nitride light-emitting epitaxial structures

Author

Zhao, Y.S. ; Jensen, C.L. ; Chuang, R.W. ; Lee, H.P. ; Dong, Z.J. ; Shih, R.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

Volume

21

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

212

Lastpage

214

Abstract

We report an easy-to-implement wafer-level electroluminescence characterization technique for InGaN/GaN light-emitting diodes (LED´s) epi-wafers by means of multiple electrical probes. By first damaging the p-n junctions of the LED epilayer at localized spots, diode-like current versus voltage characteristics and emission spectra can be obtained at injection currents as high as 100 mA. This allows a relative but reliable comparison of device-related parameters such as differential quantum efficiency, leakage current, and series resistance among LED epi-wafers.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; indium compounds; leakage currents; light emitting diodes; probes; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; semiconductor epitaxial layers; semiconductor quantum wells; wide band gap semiconductors; 100 mA; III-nitride; InGaN-GaN; InGaN/GaN LED epi-wafers; SQW LED; breakdown voltage; dead current; differential quantum efficiency; diode-like current versus voltage characteristics; emission spectra; injection current; leakage current; light-emitting epitaxial structures; localized damage; multiple electrical probes; p-n junctions; reliable comparison; series resistance; wafer-level electrical probing technique; wafer-level electroluminescence characterization; Electric resistance; Electrical resistance measurement; Electroluminescence; Gallium nitride; Leakage current; Light emitting diodes; Optical sensors; Probes; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.841299

Filename

841299