Title :
Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
Author :
Roldán, J.B. ; Gámiz, F. ; López-Villanueva, J.A. ; Cartujo-Cassinello, P.
Author_Institution :
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
fDate :
5/1/2000 12:00:00 AM
Abstract :
We have developed a new analytical ultrashort channel SOI MOSFET for circuit simulation where the effects of series resistance, self-heating and velocity overshoot are included. We have reproduced experimental measurements validating our model. Its simplicity allowed us to study the contribution of each effect separately in an easy way.
Keywords :
MOSFET; circuit simulation; semiconductor device models; silicon-on-insulator; analytical ultrashort channel SOI MOSFET; circuit simulation; deep submicrometer SOI MOSFET; drain current model; self-heating; series resistance; velocity overshoot effects; Circuit simulation; Electrical resistance measurement; Insulation; MOSFET circuits; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Thermal conductivity; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
