DocumentCode :
1331680
Title :
Modeling of 10-nm-scale ballistic MOSFET´s
Author :
Naveh, Y. ; Likharev, K.K.
Author_Institution :
State Univ. of New York, Stony Brook, NY, USA
Volume :
21
Issue :
5
fYear :
2000
fDate :
5/1/2000 12:00:00 AM
Firstpage :
242
Lastpage :
244
Abstract :
We have performed numerical modeling of nanoscale dual-gate ballistic n-MOSFET´s with ultrathin undoped channel, taking into account the effects of quantum tunneling along the channel and through the gate oxide. The results show that transistors with channel length as small as 8 nm can exhibit either a transconductance up to 4000 mS/mm or gate modulation of current by more than 8 orders of magnitude, depending on the gate oxide thickness. These characteristics make the sub-10-nm devices potentially suitable for logic and memory applications, though their parameters are rather sensitive to size variations.
Keywords :
MOSFET; nanotechnology; semiconductor device models; tunnelling; 10 nm; 2D Poisson equation; 4000 mS/mm; 8 nm; DIBL effect; ballistic MOSFET; channel length; gate current modulation; gate oxide thickness; logic applications; memory applications; nanoscale dual-gate ballistic n-MOSFET; numerical modeling; quantum tunneling; size variation sensitivity; transconductance; ultrathin undoped channel; Electrodes; Electrons; Electrostatics; Logic devices; MOSFET circuits; Numerical models; Poisson equations; Silicon; Transconductance; Tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.841309
Filename :
841309
Link To Document :
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