DocumentCode
1331686
Title
An analytical solution to a double-gate MOSFET with undoped body
Author
Taur, Yuan
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
21
Issue
5
fYear
2000
fDate
5/1/2000 12:00:00 AM
Firstpage
245
Lastpage
247
Abstract
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson´s equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.
Keywords
CMOS integrated circuits; MOSFET; Poisson equation; semiconductor device models; work function; 1-D analytical solution; Poisson´s equation; band bending; double-gate CMOS; double-gate MOSFET; gate voltage; gate work function requirements; mobile charge term; silicon thickness; threshold criterion; undoped body; volume inversion; Boundary conditions; Electron mobility; MOSFET circuits; Poisson equations; Semiconductor devices; Semiconductor films; Silicon; Threshold voltage; Tunneling; Very large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.841310
Filename
841310
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