Title :
An analytical solution to a double-gate MOSFET with undoped body
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
5/1/2000 12:00:00 AM
Abstract :
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson´s equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.
Keywords :
CMOS integrated circuits; MOSFET; Poisson equation; semiconductor device models; work function; 1-D analytical solution; Poisson´s equation; band bending; double-gate CMOS; double-gate MOSFET; gate voltage; gate work function requirements; mobile charge term; silicon thickness; threshold criterion; undoped body; volume inversion; Boundary conditions; Electron mobility; MOSFET circuits; Poisson equations; Semiconductor devices; Semiconductor films; Silicon; Threshold voltage; Tunneling; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
