Title :
Silicon-on-insulator optical intensity modulator based on waveguide-vanishing effect
Author :
Zhao, C.Z. ; Liu, E.K. ; Li, G.Z. ; Guo, L.
fDate :
8/29/1996 12:00:00 AM
Abstract :
A silicon-on-insulator (SOI) optical intensity modulator has been proposed and fabricated, and is based on the large cross-section singlemode rib waveguide condition, the waveguide-vanishing effect and the free-carrier plasma dispersion effect. In the modulator the SOI technique uses silicon and silicon dioxide thermal bonding and back-polishing. The insertion loss of the device is measured to be 3.65 dB at a wavelength of 1.3 μm. The modulation depth is 96% at an injection current of 45 mA. Response time is ~160 ns
Keywords :
optical losses; optical modulation; optical planar waveguides; optical switches; rib waveguides; silicon-on-insulator; 1.3 micrometre; 160 ns; 3.65 dB; 45 mA; SOI; Si-SiO2; back-polishing; free-carrier plasma dispersion effect; injection current; insertion loss; modulation depth; optical intensity modulator; response time; singlemode rib waveguide condition; thermal bonding; waveguide-vanishing effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961110
