• DocumentCode
    1331863
  • Title

    Laterally oxidised InAlAs-oxide/InP distributed Bragg reflectors

  • Author

    Takenouchi, H. ; Kagawa, Toshinori ; Ohiso, Y. ; Tadokoro, T. ; Kurokawa, Takashi

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa
  • Volume
    32
  • Issue
    18
  • fYear
    1996
  • fDate
    8/29/1996 12:00:00 AM
  • Firstpage
    1671
  • Abstract
    The authors propose a new type of distributed Bragg reflector (DBR) using InAlAs-oxide/InP by lateral oxidation for long wavelength vertical cavity surface-emitting lasers. When oxidation was performed at 525°C, the InAlAs layer´s refractive index changed from 3.2 to 2.5. Results show that the peak reflectivity of a 10 pair DBR is 96.9% at 1.29 μm
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961097
  • Filename
    533376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1331863