DocumentCode :
1331863
Title :
Laterally oxidised InAlAs-oxide/InP distributed Bragg reflectors
Author :
Takenouchi, H. ; Kagawa, Toshinori ; Ohiso, Y. ; Tadokoro, T. ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
Volume :
32
Issue :
18
fYear :
1996
fDate :
8/29/1996 12:00:00 AM
Firstpage :
1671
Abstract :
The authors propose a new type of distributed Bragg reflector (DBR) using InAlAs-oxide/InP by lateral oxidation for long wavelength vertical cavity surface-emitting lasers. When oxidation was performed at 525°C, the InAlAs layer´s refractive index changed from 3.2 to 2.5. Results show that the peak reflectivity of a 10 pair DBR is 96.9% at 1.29 μm
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961097
Filename :
533376
Link To Document :
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