Title :
Laterally oxidised InAlAs-oxide/InP distributed Bragg reflectors
Author :
Takenouchi, H. ; Kagawa, Toshinori ; Ohiso, Y. ; Tadokoro, T. ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
8/29/1996 12:00:00 AM
Abstract :
The authors propose a new type of distributed Bragg reflector (DBR) using InAlAs-oxide/InP by lateral oxidation for long wavelength vertical cavity surface-emitting lasers. When oxidation was performed at 525°C, the InAlAs layer´s refractive index changed from 3.2 to 2.5. Results show that the peak reflectivity of a 10 pair DBR is 96.9% at 1.29 μm
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961097
