Title :
Solid source molecular beam epitaxy of low threshold strained layer 1.3 μm InAsP/GaInAsP lasers
Author :
Wamsley, C.C. ; Koch, M.W. ; Wicks, G.W.
fDate :
8/29/1996 12:00:00 AM
Abstract :
A threshold current density of 270 A/cm2 has been achieved for 2 mm long broad area lasers grown by solid source molecular beam epitaxy. These are the lowest reported threshold current density 1.3 μm lasers by any type of MBE growth technique
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.3 micrometre; 2 mm; InAsP-GaInAsP; MQW lasers; broad area lasers; solid source molecular beam epitaxy; strained layer lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961090
