Title :
Low noise 20 Gbit/s photoreceiver with distributed GaAs P-HEMT amplifiers
Author :
Legros, E. ; Merrar, A. ; Billard, M. ; Joly, C. ; Blanconnier, P.
fDate :
8/29/1996 12:00:00 AM
Abstract :
20 Gbit/s photoreceivers have been realised by cascading three distributed pre-amplifiers purposely designed and processed with a GaAs PHEMT 0.2 μm gate length technology. The bandwidth is 16 GHz, and an average equivalent input noise as low as 12 pA/√Hz up to 14 GHz is obtained. The transimpedance is 63 dBΩ
Keywords :
HEMT integrated circuits; MMIC amplifiers; cascade networks; circuit noise; digital communication; distributed amplifiers; field effect MMIC; optical receivers; p-i-n photodiodes; preamplifiers; wideband amplifiers; 0.2 micron; 16 GHz; 20 Gbit/s; GaAs; GaAs PHEMT; P-HEMT amplifiers; cascaded amplifiers; distributed HEMT amplifiers; distributed preamplifiers; low noise photoreceiver;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961094
