DocumentCode
1331957
Title
Low noise 20 Gbit/s photoreceiver with distributed GaAs P-HEMT amplifiers
Author
Legros, E. ; Merrar, A. ; Billard, M. ; Joly, C. ; Blanconnier, P.
Volume
32
Issue
18
fYear
1996
fDate
8/29/1996 12:00:00 AM
Firstpage
1693
Abstract
20 Gbit/s photoreceivers have been realised by cascading three distributed pre-amplifiers purposely designed and processed with a GaAs PHEMT 0.2 μm gate length technology. The bandwidth is 16 GHz, and an average equivalent input noise as low as 12 pA/√Hz up to 14 GHz is obtained. The transimpedance is 63 dBΩ
Keywords
HEMT integrated circuits; MMIC amplifiers; cascade networks; circuit noise; digital communication; distributed amplifiers; field effect MMIC; optical receivers; p-i-n photodiodes; preamplifiers; wideband amplifiers; 0.2 micron; 16 GHz; 20 Gbit/s; GaAs; GaAs PHEMT; P-HEMT amplifiers; cascaded amplifiers; distributed HEMT amplifiers; distributed preamplifiers; low noise photoreceiver;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961094
Filename
533390
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