DocumentCode
133196
Title
Realistic models of quantum-dot heterostructures
Author
Barettin, D. ; Auf der Maur, M. ; Pecchia, Antonio ; Di Carlo, A.
Author_Institution
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear
2014
fDate
1-4 Sept. 2014
Firstpage
3
Lastpage
4
Abstract
Different numerical simulations of quantum-dot heterostructures derived from experimental results are presented. We extrapolated three-dimensional dot models directly by atomic force microscopy and high-resolution transmission electron microscopy results, and we present electromechanical, continuum k⃗ · p⃗, atomistic Tight Binding and optical calculations for these realistic structures, also compared with benchmark calculations with ideal structures largely applied in the literature. According our results, the use of more realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.
Keywords
atomic force microscopy; extrapolation; nanophotonics; semiconductor quantum dots; tight-binding calculations; transmission electron microscopy; atomic force microscopy; atomistic tight binding calculations; continuum k⃗ · p⃗ calculations; electromechanical calculations; extrapolation; high-resolution transmission electron microscopy; optical calculations; quantum-dot heterostructures; quantum-dot nanostructures; three-dimensional dot models; Geometry; Indium phosphide; Microscopy; Numerical models; Quantum dots; Shape; Strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location
Palma de Mallorca
ISSN
2158-3234
Print_ISBN
978-1-4799-3681-6
Type
conf
DOI
10.1109/NUSOD.2014.6935327
Filename
6935327
Link To Document