• DocumentCode
    133196
  • Title

    Realistic models of quantum-dot heterostructures

  • Author

    Barettin, D. ; Auf der Maur, M. ; Pecchia, Antonio ; Di Carlo, A.

  • Author_Institution
    Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
  • fYear
    2014
  • fDate
    1-4 Sept. 2014
  • Firstpage
    3
  • Lastpage
    4
  • Abstract
    Different numerical simulations of quantum-dot heterostructures derived from experimental results are presented. We extrapolated three-dimensional dot models directly by atomic force microscopy and high-resolution transmission electron microscopy results, and we present electromechanical, continuum k⃗ · p⃗, atomistic Tight Binding and optical calculations for these realistic structures, also compared with benchmark calculations with ideal structures largely applied in the literature. According our results, the use of more realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.
  • Keywords
    atomic force microscopy; extrapolation; nanophotonics; semiconductor quantum dots; tight-binding calculations; transmission electron microscopy; atomic force microscopy; atomistic tight binding calculations; continuum k⃗ · p⃗ calculations; electromechanical calculations; extrapolation; high-resolution transmission electron microscopy; optical calculations; quantum-dot heterostructures; quantum-dot nanostructures; three-dimensional dot models; Geometry; Indium phosphide; Microscopy; Numerical models; Quantum dots; Shape; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
  • Conference_Location
    Palma de Mallorca
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-3681-6
  • Type

    conf

  • DOI
    10.1109/NUSOD.2014.6935327
  • Filename
    6935327