Title :
Low crosstalk (<-40 dB) in 1.55 μm high speed OEIC photoreceiver arrays with novel on-chip shielding
Author :
Gutierrez-Aitken, A.L. ; Bhattacharya, P. ; Syao, K.C. ; Yang, K. ; Haddad, G.I. ; Zhang, X.
fDate :
8/29/1996 12:00:00 AM
Abstract :
InP-based monolithically integrated PIN/HBT photoreceiver arrays with novel on-chip shielding, to reduce electrical and optical crosstalk, have been fabricated and characterised. The photoreceiver array with on-chip plated gold shielding demonstrated an adjacent-channel crosstalk of <-40 dB, which represents a 17 dB reduction compared to -23 dB in an array without such shielding. The arrays demonstrate bandwidths of 5-7 GHz
Keywords :
crosstalk; electromagnetic shielding; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical crosstalk; optical receivers; p-i-n photodiodes; photodetectors; wavelength division multiplexing; 1.55 micron; 5 to 7 GHz; InP; InP-based monolithic arrays; WDM; adjacent-channel crosstalk; electrical crosstalk; high speed OEIC photoreceiver arrays; integrated PIN/HBT photoreceiver arrays; low crosstalk arrays; onchip shielding; optical crosstalk; plated Au shielding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961140
