• DocumentCode
    1332025
  • Title

    Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 μm AlGaAs/GaAs-HEMTs

  • Author

    Lao, Z. ; Berroth, Manfred ; Hurm, V. ; Ludwig, Michael ; Bronner, W. ; Schneider, Jurgen

  • Author_Institution
    Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg
  • Volume
    32
  • Issue
    18
  • fYear
    1996
  • fDate
    8/29/1996 12:00:00 AM
  • Firstpage
    1708
  • Abstract
    A monolithic 10 channel limiting amplifier for high speed optical fibre communication systems based on 0.3 μm gate length enhancement and depletion AlGaAs/GaAs HEMTs (fT=50/45 GHz) has been fabricated. Each channel has a small signal differential gain of 35 dB and a bandwidth of 8.5 GHz; the amplifier array operates reliably up to 10 Gbit/s. The differential output voltages are limited to 1.2 VP-P . The power consumption is 2.5 W at a single supply voltage of -5 V
  • Keywords
    HEMT integrated circuits; III-V semiconductors; aluminium compounds; differential amplifiers; digital communication; gallium arsenide; optical communication equipment; wideband amplifiers; -5 V; 0.3 micron; 10 Gbit/s; 10 channel amplifier array; 2.5 W; 35 dB; 45 GHz; 50 GHz; 8.5 GHz; AlGaAs-GaAs; AlGaAs/GaAs HEMTs; depletion type; enhancement type; high speed optical fibre communication; monolithic limiting amplifier; single supply voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961105
  • Filename
    533400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1332025