Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength

Author

Auf der Maur, M. ; Barettin, D. ; Pecchia, Antonio ; Sacconi, F. ; Di Carlo, A.

Author_Institution

Dept. of Electron. Eng., Univ. degli Studi di Roma “Tor Vergata”, Rome, Italy

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

11

Lastpage

12

Abstract

In this work we present the effect of compositional fluctuations in InGaN/GaN quantum wells (QWs) on their spontaneous emission properties. We show that random alloy fluctuations lead to fluctuations of both the optical matrix elements and the emission energy and that the two quantities are correlated. A qualitatively different behaviour between flat band QWs and QWs with strong quantum confined Stark effect is found and explained by the localization behaviour of electrons and holes.

Keywords

III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; quantum confined Stark effect; semiconductor quantum wells; spontaneous emission; InGaN-GaN; alloy fluctuations; compositional fluctuations; electron localization; emission energy; hole localization; optical emission strength; optical matrix elements; quantum confined Stark effect; quantum wells; spontaneous emission; Charge carrier processes; Electron optics; Gallium nitride; Green products; Light emitting diodes; Metals; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935331

Filename

6935331