Title :
Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength
Author :
Auf der Maur, M. ; Barettin, D. ; Pecchia, Antonio ; Sacconi, F. ; Di Carlo, A.
Author_Institution :
Dept. of Electron. Eng., Univ. degli Studi di Roma “Tor Vergata”, Rome, Italy
Abstract :
In this work we present the effect of compositional fluctuations in InGaN/GaN quantum wells (QWs) on their spontaneous emission properties. We show that random alloy fluctuations lead to fluctuations of both the optical matrix elements and the emission energy and that the two quantities are correlated. A qualitatively different behaviour between flat band QWs and QWs with strong quantum confined Stark effect is found and explained by the localization behaviour of electrons and holes.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; quantum confined Stark effect; semiconductor quantum wells; spontaneous emission; InGaN-GaN; alloy fluctuations; compositional fluctuations; electron localization; emission energy; hole localization; optical emission strength; optical matrix elements; quantum confined Stark effect; quantum wells; spontaneous emission; Charge carrier processes; Electron optics; Gallium nitride; Green products; Light emitting diodes; Metals; Stimulated emission;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935331
