DocumentCode
1332058
Title
0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths
Author
Zhang, Xiaobing ; Gutierrez-Aitken, A.L. ; Klotzkin, David ; Bhattacharya, Pallab ; Caneau, Catherine ; Bhat, Ritesh
Author_Institution
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI
Volume
32
Issue
18
fYear
1996
fDate
8/29/1996 12:00:00 AM
Firstpage
1715
Abstract
GaAs-based 0.98 μm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200 μm long singlemode ridge lasers are characterised by Ith=3 mA, f-3 dB=45 GHz, f-3 dB (measured)=43 GHz, and f-3 dB(max)=84 GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76 GHz, respectively
Keywords
III-V semiconductors; gallium arsenide; laser transitions; optical modulation; quantum well lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; 0.98 micron; 200 micron; 3 mA; 43 GHz; 43 to 84 GHz; 76 GHz; CW operation; GaAs; GaAs-based MQW lasers; MOVPE growth; MQW tunnelling injection lasers; multiquantum well lasers; pulsed operation; ridge waveguide lasers; singlemode ridge lasers; ultra-high modulation bandwidths;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961156
Filename
533405
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