DocumentCode
1332067
Title
1.5 μm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power
Author
Garbuzov, D. ; Xu, Lie ; Forrest, Stephen R. ; Menna, R. ; Martinelli, R. ; Connolly, J.C.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ
Volume
32
Issue
18
fYear
1996
fDate
8/29/1996 12:00:00 AM
Firstpage
1717
Abstract
Reduction of internal loss and a twofold increase of differential efficiency have been obtained for 1.5 μm wavelength InGaAsP/InP separate confinement multiquantum well long cavity lasers with broadened waveguides. A record CW output power of 4.6 W has been demonstrated for a laser with a 200 μm aperture
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical losses; quantum well lasers; waveguide lasers; 1.5 micron; 200 micron; 4.6 W; CW output power; InGaAsP-InP; MQW long cavity lasers; SCH-MQW LD; broadened waveguides; broadened-waveguide laser diodes; differential efficiency; high output power; low internal loss; multiquantum well laser; separate confinement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961098
Filename
533406
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