DocumentCode :
1332086
Title :
Improved Optical and ESD Characteristics for GaN-Based LEDs With an 
Layer
Author :
Chiang, T.H. ; Chiou, Y.Z. ; Chang, S.J. ; Wang, C.K. ; Ko, T.K. ; Lin, T.K. ; Chiu, C.J. ; Chang, S.P.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
11
Issue :
1
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
76
Lastpage :
80
Abstract :
Nitride-based light-emitting diodes (LEDs) with an n- -GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n--GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with n--GaN layer thicknesses of 0.15, 0.2, and 0.25 μm could endure electrostatic discharge surges up to -1200, - 1800, and -3000 V, respectively.
Keywords :
III-V semiconductors; electrostatic discharge; gallium compounds; light emitting diodes; wide band gap semiconductors; ESD characteristics; GaN; LED output intensity; current spreading; electrostatic discharge surge; nitride-based light-emitting diodes; optical characteristics; series resistance; size 0.15 mum; size 0.2 mum; size 0.25 mum; $hbox{n}^{-}hbox{-GaN}$
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2010.2078511
Filename :
5582271
Link To Document :
