Improved Optical and ESD Characteristics for GaN-Based LEDs With an $\\hbox {n}^{-}\\hbox {-GaN}$ Layer

Author

Chiang, T.H. ; Chiou, Y.Z. ; Chang, S.J. ; Wang, C.K. ; Ko, T.K. ; Lin, T.K. ; Chiu, C.J. ; Chang, S.P.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

11

Issue

1

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

76

Lastpage

80

Abstract

Nitride-based light-emitting diodes (LEDs) with an n^- -GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n^--GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with n^--GaN layer thicknesses of 0.15, 0.2, and 0.25 μm could endure electrostatic discharge surges up to -1200, - 1800, and -3000 V, respectively.

Keywords

III-V semiconductors; electrostatic discharge; gallium compounds; light emitting diodes; wide band gap semiconductors; ESD characteristics; GaN; LED output intensity; current spreading; electrostatic discharge surge; nitride-based light-emitting diodes; optical characteristics; series resistance; size 0.15 mum; size 0.2 mum; size 0.25 mum; $hbox{n}^{-}hbox{-GaN}$ layer; Current spreading; electrostatic discharge (ESD); light-emitting diode (LED);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2010.2078511

Filename

5582271

Improved Optical and ESD Characteristics for GaN-Based LEDs With an Layer

Chiang, T.H. ; Chiou, Y.Z. ; Chang, S.J. ; Wang, C.K. ; Ko, T.K. ; Lin, T.K. ; Chiu, C.J. ; Chang, S.P.

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Improved Optical and ESD Characteristics for GaN-Based LEDs With an $\\hbox {n}^{-}\\hbox {-GaN}$ Layer