Title :
Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice
Author :
Pan, David Z. ; Zeng, Y.P. ; Wu, Junyong ; Zhu, Y.Q. ; Zhang, Clara H. ; Li, J.M. ; Wang, C.Y.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing
fDate :
8/29/1996 12:00:00 AM
Abstract :
The authors report for the first time, normal incident infrared absorption around the wavelength of 13-15 μm from a 20 period InGaAs/GaAs quantum dot superlattice (QDS). The structure of a QDS has been confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8-14 μm quantum dot infrared detectors
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; light absorption; photoluminescence; semiconductor quantum dots; semiconductor superlattices; transmission electron microscopy; 13 to 15 micrometre; InGaAs-GaAs; cross-section transmission electron microscopy; infrared absorption; photoluminescence spectrum; quantum dot infrared detectors; quantum dot superlattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961135
