DocumentCode :
1332112
Title :
Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics
Author :
Lo, Po-Yuan ; Li, Pei-Wen ; Chan, Yi-Jen
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Volume :
57
Issue :
11
fYear :
2010
Firstpage :
3131
Lastpage :
3136
Abstract :
Poly-3-hexylthiophene organic thin-film transistors (OTFTs) were fabricated with different kinds of stacked gate dielectrics, which exhibit an individual effective trap behavior. The transistor fabricated with a stacked gate dielectric in a donor-like trap behavior exhibits a significant current hysteresis loop, a large threshold voltage shift, and subthreshold swing changes during operation in the dark and under illumination. The device performance is improved using a stacked gate dielectric with acceptor-like traps. The mechanisms of OTFTs with an acceptor-like trap dielectric and a donor-like dielectric are discussed.
Keywords :
dielectric materials; organic semiconductors; thin film transistors; acceptor-like trap dielectric; donor-like dielectric; donor-like trap behavior; hysteresis loop; poly-3-hexylthiophene organic thin-film transistors; stability improvement; stacked gate dielectrics; Dielectrics; Electron traps; Organic thin film transistors; Radiation effects; Organic thin-film transistor (OTFT); phototransistor poly-3-hexylthiophene (P3HT); stacked gate dielectric;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2067772
Filename :
5582275
Link To Document :
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