• DocumentCode
    1332115
  • Title

    Optical bistability of In0.52Al0.48As/InP type II multi-quantum well diodes

  • Author

    Kawamura, Yuriko ; Iwamura, Hideyuki ; Ito, Takao ; Inoue, Naoko

  • Author_Institution
    Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ.
  • Volume
    32
  • Issue
    18
  • fYear
    1996
  • fDate
    8/29/1996 12:00:00 AM
  • Firstpage
    1729
  • Abstract
    Optical bistability was observed in the current-light output (I-L) characteristic of an InAlAs/InP type II multi-quantum well (MQW) diode for the first time. With bistability, light output suddenly increases at 70 mA when the current increases; it suddenly decreases at 30 mA when the current decreases. We found that the bistability of the I-L characteristic corresponds exactly to the bistability of the current-voltage (I-V) characteristic of the InAlAs/InP MQW diode
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; light emitting diodes; optical bistability; semiconductor quantum wells; spontaneous emission; 30 to 70 mA; I-L characteristic; I-V characteristic; III-V semiconductors; In0.52Al0.48As-InP; current-light output; optical bistability; spontaneous emission; type II multi-quantum well diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961133
  • Filename
    533414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1332115