Title :
Optical bistability of In0.52Al0.48As/InP type II multi-quantum well diodes
Author :
Kawamura, Yuriko ; Iwamura, Hideyuki ; Ito, Takao ; Inoue, Naoko
Author_Institution :
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ.
fDate :
8/29/1996 12:00:00 AM
Abstract :
Optical bistability was observed in the current-light output (I-L) characteristic of an InAlAs/InP type II multi-quantum well (MQW) diode for the first time. With bistability, light output suddenly increases at 70 mA when the current increases; it suddenly decreases at 30 mA when the current decreases. We found that the bistability of the I-L characteristic corresponds exactly to the bistability of the current-voltage (I-V) characteristic of the InAlAs/InP MQW diode
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; light emitting diodes; optical bistability; semiconductor quantum wells; spontaneous emission; 30 to 70 mA; I-L characteristic; I-V characteristic; III-V semiconductors; In0.52Al0.48As-InP; current-light output; optical bistability; spontaneous emission; type II multi-quantum well diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961133
