Title :
Monte Carlo simulation of hot electron transport in III-N LEDs
Author :
Kivisaari, Pyry ; Sadi, Toufik ; Oksanen, Jani ; Tulkki, Jukka
Author_Institution :
Dept. of Biomed. Eng. & Comput. Sci., Aalto Univ., Aalto, Finland
Abstract :
We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.
Keywords :
Auger effect; III-V semiconductors; Monte Carlo methods; diffusion; hot carriers; leakage currents; light emitting diodes; quantum well devices; semiconductor quantum wells; Auger recombination; Auger-excited electrons; III-N LED; Monte Carlo simulation; drift-diffusion; electron dynamics; electron leakage; hot electron transport; leakage current; light-emitting diode; multiquantum well LED; Leakage currents; Light emitting diodes; Mathematical model; Quantum well devices; Sociology; Spontaneous emission; Statistics;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935336
