Photoresponse simulation for separate absorption and multiplication GaN/AlGaN avalanche photodiode

Author

Xiaodong Wang ; Bingbing Wang ; Liwei Hou ; Wei Xie ; Xiaoyao Chen ; Ming Pan

Author_Institution

No. 50 Res. Inst., China Electron. Technol. Group Corp., Shanghai, China

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

31

Lastpage

32

Abstract

We present the detailed procedure for modeling of separate absorption and multiplication (SAM) GaN/AlGaN avalanche photodiode (APD). The bias-dependent spectral responsivity characteristics are obtained by using the constructed two-dimensional numerical model. It is found that the spectral responsivities with wavelength from 240 to 450nm are entirely increased with the increased bias.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium compounds; wide band gap semiconductors; GaN-AlGaN; SAM APD; bias-dependent spectral responsivity; photoresponse simulation; separate absorption-multiplication avalanche photodiode; two-dimensional numerical model; wavelength 240 nm to 450 nm; Absorption; Aluminum gallium nitride; Avalanche photodiodes; Fitting; Gallium nitride; Mathematical model; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935341

Filename

6935341