The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier

Author

Wang, W.W. ; Ding, Lixin ; Guo, F.M.

Author_Institution

Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

37

Lastpage

38

Abstract

A GaAs/InGaAs/InAs quantum dots - quantum well in double barrier is discussed in this paper, because it has shown a specific inner multiplication in test and lower dark current accompanied by high current gains. The S (signal)/D (dark current) has reached 10⁶ at a certain light power and bias. For further know its electronic transport and photoelectric characteristic, we are contrastive analysis sensitivity and dark current of quantum dots and quantum well in double barrier respectively, and interrelation under different illumination intensity respectively.

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; photoconductivity; semiconductor quantum dots; semiconductor quantum wells; GaAs-InGaAs-InAs; dark current; double barrier; double barrier model; electronic transport; illumination intensity; photoelectric conversion; quantum dots-in-well; Dark current; Gallium arsenide; Indium gallium arsenide; Photoconductivity; Photodetectors; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935344

Filename

6935344