DocumentCode
13324
Title
A Diamond:H/MoO3 MOSFET
Author
Vardi, Alon ; Tordjman, Maurice ; del Alamo, Jesus A. ; Kalish, Rafi
Author_Institution
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume
35
Issue
12
fYear
2014
fDate
Dec. 2014
Firstpage
1320
Lastpage
1322
Abstract
A p-type MOSFET based on a heterointerface of hydrogenated-diamond transfer doped with MoO3 (Diamond:H/MoO3) is demonstrated for the first time. This is an important new heterostructure system due to its potentially improved temperature stability as compared with the better established Diamond:H/H2O system. MOSFETs using HfO2 as gate insulator show excellent output characteristics and gate control over the 2-D hole gas at the Diamond:H/MoO3 interface. In 3.5-μm gate length devices, we obtain a maximum drain-current ON-OFF ratio of three orders of magnitude and a maximum transconductance of 2.5 μS/μm.
Keywords
MOSFET; diamond; molybdenum compounds; semiconductor doping; 2D hole gas; drain-current ON-OFF ratio; gate control; gate insulator; gate length devices; heterointerface; heterostructure system; hydrogenated-diamond transfer doping; maximum transconductance; p-type MOSFET; potentially-improved temperature stability; size 3.5 mum; Conductivity; Diamonds; Doping; Logic gates; MOSFET; Surface treatment; Diamond:H; Diamond:H, MoO_{3}; MOSFET; MoO3; surface transfer doping;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2364832
Filename
6936920
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