Title :
A self-consistent algorithm for InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors
Author :
Lu, X.Q. ; Xiong, D.Y. ; Yu, C.L. ; Wang, J.Q.
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
This work presents a self-consistent algorithm for the simulation of responsivity and detectivity of InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors. This algorithm takes into account the fundamental mechanisms involved in the InGaAs/GaAs detector detection process. We have calculated a practical InGaAs/GaAs detector by using this algorithm. The obtained results were in good agreement with the experiments at low temperature below 3.5 V.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; nanophotonics; photodetectors; quantum well devices; semiconductor quantum wells; InGaAs-GaAs; detectivity; responsivity; self-consistent algorithm; strained multi-period quantum well infrared photodetectors; Dark current; Detectors; Gallium arsenide; Indium gallium arsenide; Lighting; Photodetectors; Quantum dots;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935351
