Title :
Monolithically integrable active microwave inductor
Author :
Chien, Heng-Chieh ; Frey, Jesse
Author_Institution :
Aerosp. Technol. Center, Allied-Signal Aerosp. Co., Columbia, MD
fDate :
7/7/1988 12:00:00 AM
Abstract :
A new approach to implementation of a GaAs monolithic microwave gyrator, or active inductor, is presented. The approach requires no resistors and only very small capacitors. The circuit is very compact, and facilitates small-area microwave inductors with values much larger than can be achieved by spiral inductors. A circuit built using this technique has an inductance of 5.8 nH over the frequency range of 45 MHz to 1 GHz. Methods to extend the operating frequency of the gyrator and improve the Q-value of the active inductor are discussed
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; gyrators; inductors; microwave integrated circuits; 45 MHz to 1 GHz; GaAs; III-V semiconductors; MESFETs; MMIC; Q-factor improvement; active microwave inductor; monolithic microwave gyrator; small area inductors;
Journal_Title :
Electronics Letters