Corrections to “On the Ballistic Injection Velocity in Deeply Scaled MOSFETs” [Aug 09 1674-1680]

In the above-named article [ibid., vol. 59, no. 4, pp. 994-1001, Apr. 2012], the authors showed that the velocity deduced by analyzing transistor I-V data with the virtual-source transistor model of Khakifirooz, et al. (2009) is not always the velocity at the top of the energy barrier between the source and channel. Reference 1 in the Appendix of the original article (on screening in nanoscale MOSFETs) presented a qualitative explanation for why this discrepancy is more pronounced in Si MOSFETs than in III-V MOSFETs. This note points out an error in the original article but does not change the qualitative argument.