DocumentCode :
1332796
Title :
Lattice-matched GaSb/AlGaAsSb double-heterostructure diode lasers grown by MOVPE
Author :
Wang, C.A. ; Choi, H.K.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Volume :
32
Issue :
19
fYear :
1996
fDate :
9/12/1996 12:00:00 AM
Firstpage :
1779
Lastpage :
1781
Abstract :
Double-heterostructure (DH) diode lasers consisting of a GaSb active layer and lattice-matched Al0.3Ga0.7As0.22Sb0.98 cladding layers have been grown by metal organic vapour phase epitaxy (MOVPE). The devices operate at room temperature (λ≃1.75 μm) with a pulsed threshold current density of 2.1 kA/cm2 for a 1000 μm long laser. This result is a significant improvement over the 7.5 kA/cm2 obtained for lattice-mismatched GaSb/AlGaSb DH lasers, the only other reported lasers containing AlSb-based alloys grown by MOVPE
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.75 micron; GaSb-Al0.3Ga0.7As0.22Sb0.98 ; MOVPE growth; lattice-matched double-heterostructure diode laser; pulsed threshold current density; room temperature operation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961208
Filename :
533580
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1332796
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