DocumentCode
1333039
Title
1.3 W 1.9 GHz and 1 W 2.4 GHz power amplifier MMIC in silicon
Author
Simburger, W. ; Trost, H.P. ; Wohlmuth, H.D. ; Knapp, H. ; Weger, P.
Author_Institution
Corp. Res. & Dev., Siemens AG, Munich, Germany
Volume
32
Issue
19
fYear
1996
fDate
9/12/1996 12:00:00 AM
Firstpage
1827
Lastpage
1829
Abstract
A completely integrated 1.3 W power amplifier in silicon for 1.9 and 2.4 GHz wireless and mobile communications is presented for the first time. The chip is implemented in a 25 GHz fT, 0.8 μm, three layer interconnect silicon bipolar production technology (Siemens B6HF). The MMIC is designed for 3.4 to 5 V battery operation at 1.9 GHz, and delivers 0.4 W (26 dBm) to 1.3 W (31.1 dBm) of output power with up to 33% power-added efficiency. The amplifier is also suitable for the 2.4 GHz band with slight performance loss
Keywords
MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; elemental semiconductors; mobile radio; silicon; 0.4 to 1.3 W; 0.8 micron; 1.9 GHz; 2.4 GHz; 25 GHz; 3.4 to 5 V; 33 percent; Si; Siemens B6HF; UHF IC; battery operation; bipolar production technology; mobile communications; power amplifier MMIC; three layer interconnect; wireless communications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961193
Filename
533611
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