DocumentCode
1333055
Title
High temperature characteristics of Pd Schottky contacts on n-type GaN
Author
Schmitz, A.C. ; Ping, A.T. ; Khan, M.Asif ; Chen, Q. ; Yang, J.W. ; Adesida, I.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
32
Issue
19
fYear
1996
fDate
9/12/1996 12:00:00 AM
Firstpage
1832
Lastpage
1833
Abstract
High temperature current-voltage characteristics of Pd Schottky contacts on n-type GaN have been investigated up to 500°C. The effects of high temperature annealing on barrier height and the ideality factor of the Schottky contacts were investigated. From the trend of barrier height and ideality, Pd metal is suitable as the gate metal of GaN-based FETs for temperatures below 300°C
Keywords
III-V semiconductors; Schottky barriers; annealing; gallium compounds; palladium; semiconductor-metal boundaries; 300 to 500 C; FET gate metal; Pd Schottky contact; Pd-GaN; barrier height; current-voltage characteristics; high temperature annealing; ideality factor; n-type GaN;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961191
Filename
533614
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