Enhanced photoluminescence efficiency in Er-Yb codoped InAlP native oxides

Author

Yuan, Weijia ; Nolan, E.F. ; Li, Jie ; Hall, D.C.

Author_Institution

Univ. of Notre Dame, Notre Dame, IN, USA

Volume

48

Issue

22

fYear

2012

Firstpage

1423

Lastpage

1425

Abstract

Demonstrated is the effectiveness of Yb as a sensitiser to enhance the optical emission of Er in an InAlP native oxide host, which can potentially be integrated with a GaAs-based semiconductor laser. Photoluminescence (PL) and PL excitation spectroscopy are used to evaluate the efficacy of Yb codoping. Compared to samples without Yb, an increase of ~13 times is observed in both the PL and PLE signals for Er-Yb codoped samples with an Er:Yb ratio of 1:3, indicating that the Yb effectively absorbs the pump power and transfers the absorbed energy to the Er ions. The Er PL decay lifetime remains unchanged after codoping with Yb, with the PL emission linewidth decreasing only negligibly from 39 to 35~nm.

Keywords

III-V semiconductors; aluminium compounds; erbium; indium compounds; optical pumping; photoluminescence; semiconductor doping; semiconductor lasers; spectral line breadth; ytterbium; GaAs-based semiconductor laser; InAlP:Er,Yb; PL decay lifetime; PL emission linewidth; PL excitation spectroscopy; PLE signals; codoped native oxides; codoping efficacy evaluation; energy transfers; optical emission enhancement; photoluminescence; photoluminescence efficiency; pump power; sensitiser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.3020

Filename

6352984