Lg = 150 nm recessed quantum-well In0.7Ga0.3 As MOS-HEMTs with Al2O3/ In0.52 Al0.48 As composite insulator

A report is prsented on recessed QW In_0.7Ga_0.3As MOS-HEMTs with excellent subthreshold characteristics that combine an ALD-grown 3 nm Al₂O₃ and an MBE-grown 10 nm In_0.52Al_0.48As barrier as a composite gate insulator. In particular, an L_g=150=nm In_0.7Ga_0.3As MOS-HEMT exhibits V_T==0.3=V, g_{m_max}=0.68=S/mm, DIBL=35=mV/V and S=70=mV/decade at V_DS=0.5=V. To the knowledge of the authors, the subthreshold characteristics demonstrated are the best ever reported for any planar III-V MOSFET with similar values of L_g.