A 0.25 $\\mu$ m InP DHBT 200 GHz+ Static Frequency Divider

Author

Amore, Matt D. ; Monier, Cedric ; Lin, Steven Taiyu ; Oyama, Bert ; Scott, Dennis W. ; Kaneshiro, Eric N. ; Chang, Ping-Chih ; Sato, Kenneth F. ; Niemi, Alex ; Dang, Linh ; Cavus, Abdullah ; Gutierrez-Aitken, Augusto ; Oki, Aaron K.

Author_Institution

Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA

Volume

45

Issue

10

fYear

2010

Firstpage

1992

Lastpage

2002

Abstract

Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 μm 530 GHz f_T /600 GHz+ f_max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz. The divide-by-two core flip-flop dissipates 228 mW. Techniques used for the divider design optimization and for selecting variants to maximize performance across process changes are also discussed.

Keywords

III-V semiconductors; frequency dividers; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; DHBT process; InP; divide-by-two core flip-flop; divider design optimization; frequency 530 GHz; power 228 mW; size 0.25 mum; static frequency divider circuit; DH-HEMTs; Frequency conversion; Indium phosphide; Inductance; Load modeling; Performance evaluation; Resistance; Digital; HBT; InP; divider; frequency; high speed; static;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2010.2058171

Filename

5584965

A 0.25 m InP DHBT 200 GHz+ Static Frequency Divider

Amore, Matt D. ; Monier, Cedric ; Lin, Steven Taiyu ; Oyama, Bert ; Scott, Dennis W. ; Kaneshiro, Eric N. ; Chang, Ping-Chih ; Sato, Kenneth F. ; Niemi, Alex ; Dang, Linh ; Cavus, Abdullah ; Gutierrez-Aitken, Augusto ; Oki, Aaron K.

jour

A 0.25 $\\mu$ m InP DHBT 200 GHz+ Static Frequency Divider