Analytical analysis and modelling of variation in gate capacitance of subthreshold MOSFET

Author

Banchuin, Rawid ; Chaisricharoen, Roungsan

Author_Institution

Dept. of Comput. Eng., Siam Univ., Bangkok, Thailand

fYear

2014

fDate

5-8 March 2014

Firstpage

1

Lastpage

4

Abstract

In this research, analytical analysis and modelling of statistical variations in gate capacitance of subthreshold MOSFET, has been proposed with major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET´s manufacturing process, have been taken into account. The resulting model has been found to be analytical expressions in terms of physical level variables of MOSFET. Furthermore, it has been verified by using 65 nm level BSIM4 based benchmarks and have been found to be very accurate with smaller than 10% average percentages of errors. Hence, this research gives an alternative approach to the statistical and variability aware analysis and design of subthreshold MOSFET based RF circuits, systems and applications.

Keywords

MOSFET; capacitance; semiconductor device models; statistical analysis; BSIM4 based benchmarks; analytical analysis; dopant fluctuation; gate capacitance; manufacturing process; statistical variation modelling; subthreshold MOSFET; variability aware analysis; Analytical models; Computational modeling; Fluctuations; Integrated circuit modeling; MOSFET; Semiconductor device modeling; Semiconductor process modeling; Gate Capacitance; MOSFET; subthreshold; variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technology, Electronic and Electrical Engineering (JICTEE), 2014 4th Joint International Conference on

Conference_Location

Chiang Rai

Print_ISBN

978-1-4799-3854-4

Type

conf

DOI

10.1109/JICTEE.2014.6804063

Filename

6804063