A low-current and low-distortion wideband amplifier using 0.2-μm gate MODFET fabricated by using phase-shift lithography

Author

Ishida, Hidetoshi ; Miyatsuji, Kazuo ; Tanaka, Tsuyoshi ; Takenaka, Hiroshi ; Furukawa, Hidetoshi ; Nishitsuji, Mitsuru ; Tamura, Akiyoshi ; Ueda, Daisuke

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

48

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

771

Lastpage

776

Abstract

We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 mA from 100 MHz to 3 GHz. The fabricated integrated circuit (IC) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present IC employs a MODFET with 0.2-μm gate fabricated by using a phase-shift lithography technique

Keywords

HEMT integrated circuits; III-V semiconductors; UHF amplifiers; UHF integrated circuits; gallium arsenide; integrated circuit noise; photolithography; wideband amplifiers; 0.2 micron; 1.6 dB; 10 mA; 100 MHz to 3 GHz; 800 MHz; GaAs; MODFET; high-output third-order intercept point; noise figure; operation current; phase-shift lithography; wideband amplifier; Broadband amplifiers; Equivalent circuits; HEMTs; Lithography; MODFET circuits; MODFET integrated circuits; MOSFET circuits; Operational amplifiers; Radiofrequency amplifiers; Transconductance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.841870

Filename

841870