Title :
Photocurrent enhancement in GaPNAs-based solar cells with Si nanowire array substrate
Author :
Kudryashov, D.A. ; Gudovskikh, A.S.
Author_Institution :
Nanotechnol. Res. & Educ. Centre, St.-Petersburg Acad. Univ., St. Petersburg, Russia
Abstract :
A numerical simulation of GaPNAs-based solar cells deposited on silicon nanowire (NW) array was done. It is shown that single-junction solar cell consisting of GaPNAs-based p-i-n junction with a band gap of 1.78 eV and minority charge carrier lifetime in i-layer of 0.1 ns on Si-based NW template can reach short-circuit current values of 16.5 mA/cm2 and efficiency of 11.8% under AM1.5D 100 mW/cm2. The influence of the i-layer thickness, minority carrier lifetime and NW length on solar cell´s characteristics was shown.
Keywords :
elemental semiconductors; nanowires; numerical analysis; photoconductivity; photoemission; silicon; solar cells; Si; band gap; electron volt energy 1.78 eV; minority carrier lifetime; minority charge carrier; nanowire; numerical simulation; p-i-n junction; photocurrent enhancement; short-circuit current; solar cells; time 0.1 ns; Arrays; Charge carrier lifetime; PIN photodiodes; Photovoltaic cells; Short-circuit currents; Silicon; Substrates;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935411
