Title :
In0.69Al0.31As0.41Sb0.59/In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers
Author :
Champlain, James G. ; Magno, R. ; Bass, R. ; Park, DaeLim ; Boos, J. Brad
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Presented are the first DC and RF results for a double heterojunction bipolar transistor, at a 6.2 A lattice constant, incorporating InAs0.66Sb0.34. These devices show excellent performance with a high collector current density of 1.9 × 105 A/cm2, high breakdown voltage over 2.5 V, high short-circuit current gain cutoff frequency of 59 GHz, and maximum frequency of oscillation of 34 GHz.
Keywords :
aluminium compounds; arsenic compounds; current density; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; In0.69Al0.31As0.41Sb0.59-In0.27Ga0.73Sb; contact layers; current 6.2 A; double-heterojunction bipolar transistors; frequency 34 GHz; frequency 59 GHz; high breakdown voltage; high collector current density; high short-circuit current gain cutoff frequency; lattice constant; maximum oscillation frequency; voltage 2.5 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1727
