DocumentCode
133353
Title
PDL optimization in waveguide MQW pin photodiodes
Author
Gan Zhou ; Runge, Patrick
Author_Institution
Fraunhofer Heinrich-Hertz-Inst., Berlin, Germany
fYear
2014
fDate
1-4 Sept. 2014
Firstpage
181
Lastpage
182
Abstract
In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.
Keywords
carrier density; integrated optics; light polarisation; nanophotonics; optical design techniques; optical losses; optical waveguides; optimisation; p-i-n photodiodes; quantum wells; PDL optimization; carrier transit time; free carrier density; multiple-quantum well; polarization dependent loss; strain; waveguide MQW pin photodiodes; Absorption; Charge carrier density; Optical polarization; Optical waveguides; PIN photodiodes; Quantum well devices; Strain; exciton; multiple-quantum well; pin photodiode; polarization dependent loss; simulation model;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location
Palma de Mallorca
ISSN
2158-3234
Print_ISBN
978-1-4799-3681-6
Type
conf
DOI
10.1109/NUSOD.2014.6935416
Filename
6935416
Link To Document