Material interactions of solder bumps produced with fluxless wave soldering

Author

Lin, Kwang-Lung ; Chao, Wen-Hsiuan

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

21

Issue

1

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

59

Lastpage

64

Abstract

A fluxless wave soldering process was attempted for producing solder bumps of 100 μm×100 μm, on silicon wafers containing 8×8 chips with 20×20 bumps on each chip. The solder bump structure, Al/Mo,(Mo-N)/Pd/Pb-Sn, was produced by fluxless wave soldering. The sputtering deposited Mo or MoN film was applied as a diffusion barrier between Al and solder. The Pd layer, also produced by sputtering deposition, was applied for wetting purposes. Interactions between materials during wave soldering and subsequent heat treatment of this structure were investigated. The interactions, investigated using SEM and XRD, within the multilayers occured rapidly between Pd and solder elements during wave soldering

Keywords

X-ray diffraction; diffusion barriers; heat treatment; scanning electron microscopy; sputtered coatings; wave soldering; wetting; Al-Mo-Pd-PbSn; Al-MoN-Pd-PbSn; SEM; Si; XRD; chip; diffusion barrier; fluxless wave soldering; heat treatment; multilayer structure; silicon wafer; solder bump; sputter deposited film; wetting; Chromium; Electrodes; Electronics packaging; Flip chip; Grain boundaries; Intermetallic; Nickel; Silicon; Soldering; Sputtering;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1070-9894

Type

jour

DOI

10.1109/96.659507

Filename

659507