Instrumental and process considerations for the fabrication of silicon-on-insulators (SOI) structures by plasma immersion ion implantation

Author

Chu, Paul K. ; Qin, Shu ; Chan, Chung ; Cheung, Nathan W. ; Ko, Ping K.

Author_Institution

Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, Hong Kong

Volume

26

Issue

1

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

79

Lastpage

84

Abstract

Plasma immersion ion implantation (PIII) has recently been shown to be a viable method to fabricate silicon-on-insulator (SOI) materials using either the SPIMOX (separation by plasma implantation of oxygen) or the ion cut/wafer bonding method. We have recently modified and characterized a new generation plasma immersion ion implanter for SOI fabrication, and this paper will discuss some of the instrumental and processing issues, including the plasma source, mean free path consideration, and dc sheath characteristics

Keywords

ion implantation; plasma applications; plasma sheaths; silicon-on-insulator; SPIMOX; Si; Si-on-insulators structures; dc sheath characteristics; fabrication; instrumental considerations; ion cut/wafer bonding method; mean free path consideration; plasma immersion ion implantation; plasma source; process considerations; separation by plasma implantation of O; Character generation; DC generators; Fabrication; Instruments; Plasma immersion ion implantation; Plasma materials processing; Plasma sheaths; Plasma sources; Silicon on insulator technology; Wafer bonding;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.659535

Filename

659535