Title :
High-power GaN MESFET on sapphire substrate
Author :
Gaquiere, C. ; Trassaert, S. ; Boudart, B. ; Crosnier, Y.
Author_Institution :
UMR-CNRS, Villeneuve d´´Ascq, France
fDate :
1/1/2000 12:00:00 AM
Abstract :
The first power results of GaN MESFET achieved at 2 GHz are presented. A power density of 2.2 W/mm has been obtained with an associated power added efficiency of 27% at Vds=30 V and V gs=-2 V. These results represent a significant improvement over similar MESFET´s or HFET´s grown on GaAs or InP substrates
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power MESFET; wide band gap semiconductors; 2 GHz; 27 percent; Al2O3; GaN; GaN power MESFET; power added efficiency; power density; sapphire substrate; Etching; Gallium nitride; Gold; HEMTs; MESFETs; MODFETs; Metallization; Microwave devices; Silicon carbide; Substrates;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
