• DocumentCode
    1334851
  • Title

    High-power GaN MESFET on sapphire substrate

  • Author

    Gaquiere, C. ; Trassaert, S. ; Boudart, B. ; Crosnier, Y.

  • Author_Institution
    UMR-CNRS, Villeneuve d´´Ascq, France
  • Volume
    10
  • Issue
    1
  • fYear
    2000
  • fDate
    1/1/2000 12:00:00 AM
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    The first power results of GaN MESFET achieved at 2 GHz are presented. A power density of 2.2 W/mm has been obtained with an associated power added efficiency of 27% at Vds=30 V and V gs=-2 V. These results represent a significant improvement over similar MESFET´s or HFET´s grown on GaAs or InP substrates
  • Keywords
    III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power MESFET; wide band gap semiconductors; 2 GHz; 27 percent; Al2O3; GaN; GaN power MESFET; power added efficiency; power density; sapphire substrate; Etching; Gallium nitride; Gold; HEMTs; MESFETs; MODFETs; Metallization; Microwave devices; Silicon carbide; Substrates;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.842074
  • Filename
    842074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1334851