Title :
Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs
Author :
Tai, Y.-H. ; Chiu, H.-L. ; Chou, L.-S. ; Chang, C.-H.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT) has two gate electrodes. The primary gate electrode is at the bottom, and the other is on the top. The drain current of the TFT can be controlled by both the bottom and top gates. This phenomenon provides great flexibility for the circuit design. In this letter, we propose the differential amplifier circuit using the top gate of the dual-gate a-IGZO TFT as an input for positive feedback to boost the gain. It is experimentally verified that the gain of the differential amplifier circuit is increased three times larger than those without the feedback loop.
Keywords :
II-VI semiconductors; amorphous semiconductors; differential amplifiers; electrodes; feedback; gallium compounds; indium compounds; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO4; boosted gain; circuit design; differential amplifier circuit; drain current; dual-gate thin-film transistor; gate electrodes; positive feedback; primary gate electrode; Differential amplifiers; Indium gallium zinc oxide; Thin film transistors; Threshold voltage; Differential amplifier circuit; dual-gate amorphous $hbox{InGaZnO}_{4}$ (a-IGZO) thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2220955
