Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs

Author

Tai, Y.-H. ; Chiu, H.-L. ; Chou, L.-S. ; Chang, C.-H.

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

12

fYear

2012

Firstpage

1729

Lastpage

1731

Abstract

A dual-gate amorphous InGaZnO₄ (a-IGZO) thin-film transistor (TFT) has two gate electrodes. The primary gate electrode is at the bottom, and the other is on the top. The drain current of the TFT can be controlled by both the bottom and top gates. This phenomenon provides great flexibility for the circuit design. In this letter, we propose the differential amplifier circuit using the top gate of the dual-gate a-IGZO TFT as an input for positive feedback to boost the gain. It is experimentally verified that the gain of the differential amplifier circuit is increased three times larger than those without the feedback loop.

Keywords

II-VI semiconductors; amorphous semiconductors; differential amplifiers; electrodes; feedback; gallium compounds; indium compounds; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO₄; boosted gain; circuit design; differential amplifier circuit; drain current; dual-gate thin-film transistor; gate electrodes; positive feedback; primary gate electrode; Differential amplifiers; Indium gallium zinc oxide; Thin film transistors; Threshold voltage; Differential amplifier circuit; dual-gate amorphous $hbox{InGaZnO}_{4}$ (a-IGZO) thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2220955

Filename

6353505