Self-Heating Characterization of SiGe:C HBTs by Extracting Thermal Impedances

Author

Hasnaoui, I. ; Pottrain, A. ; Gloria, D. ; Chevalier, P. ; Avramovic, V. ; Gaquiere, C.

Author_Institution

Inst. d´´Electron. de Microelectron. et de Nanotechnol., Villeneuve d´´Ascq, France

Volume

33

Issue

12

fYear

2012

Firstpage

1762

Lastpage

1764

Abstract

In this letter, the self-heating effects in SiGe heterojunction bipolar transistors (HBTs) and the influence of the emitter width W_E and the emitter length L_E on all of the thermal parameters are presented for the first time by extracting the thermal resistance R_TH, capacitance C_TH, and time constant T_TH. First, we discuss the thermal impedance extraction method. The approach is based on both dc and ac measurements within the 30 kHz-6 GHz low-frequency range. Then, the self-heating influences of various SiGe HBT topologies are presented. Finally, R_TH, C_TH, and T_TH, which were extracted from different transistor geometries, are compared.

Keywords

Ge-Si alloys; capacitance; carbon; heterojunction bipolar transistors; semiconductor materials; thermal resistance; HBT; SiGe:C; ac measurement; dc measurement; emitter length; emitter width; frequency 30 kHz to 6 GHz; heterojunction bipolar transistor; self-heating characterization; self-heating effect; thermal capacitance; thermal impedance; thermal impedance extraction method; thermal parameter; thermal resistance; thermal time constant; transistor geometry; Capacitance; Electrical resistance measurement; Heterojunction bipolar transistors; Impedance; Silicon germanium; Thermal resistance; Self-heating; SiGe heterojunction bipolar transistors (HBTs); thermal capacitance; thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2220752

Filename

6353506